In-situ neutron-transmutation for substitutional doping in 2D layered indium selenide based phototransistor
نویسندگان
چکیده
Abstract Neutron-transmutation doping (NTD) has been demonstrated for the first time in this work substitutional introduction of tin (Sn) shallow donors into two-dimensional (2D) layered indium selenide (InSe) to manipulate electron transfer and charge carrier dynamics. Multidisciplinary study including density functional theory, transient optical absorption, FET devices have carried out reveal that field effect mobility fabricated phototransistor is increased 100-fold due smaller effective mass longer life Sn-doped InSe. The responsivity InSe based accordingly enhanced by about 50 times, being as high 397 A/W. results show NTD a highly controllable method, possessing good compatibility with semiconductor manufacturing process, even after device fabrication, can be without introducing any contamination, which radically different from traditional methods.
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ژورنال
عنوان ژورنال: eLight
سال: 2022
ISSN: ['2662-8643']
DOI: https://doi.org/10.1186/s43593-022-00017-z